Onsemi - NGB18N40ACLBT4G

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NGB18N40ACLBT4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGB18N40ACLBT4G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 18 A; Maximum Rise Time (tr): 7000 ns; JESD-609 Code: e3;
Datasheet NGB18N40ACLBT4G Datasheet
In Stock1,827
NAME DESCRIPTION
Maximum Collector Current (IC): 18 A
Maximum Rise Time (tr): 7000 ns
Maximum Gate-Emitter Threshold Voltage: 1.9 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 115 W
Maximum Collector-Emitter Voltage: 430 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 18 V
Maximum Fall Time (tf): 15000 ns
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Pricing (USD)

Qty. Unit Price Ext. Price
1,827 $4.130 $7,545.510

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