Onsemi - NGB8204ANT4G

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NGB8204ANT4G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGB8204ANT4G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 18 A; JESD-609 Code: e3; Maximum Gate-Emitter Threshold Voltage: 1.9 V;
Datasheet NGB8204ANT4G Datasheet
In Stock2,454
NAME DESCRIPTION
Maximum Collector Current (IC): 18 A
Maximum Rise Time (tr): 7000 ns
Maximum Gate-Emitter Threshold Voltage: 1.9 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 115 W
Maximum Collector-Emitter Voltage: 430 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 18 V
Maximum Fall Time (tf): 15000 ns
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Pricing (USD)

Qty. Unit Price Ext. Price
2,454 $0.558 $1,369.332

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