Onsemi - NGTB40N60FLWG

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NGTB40N60FLWG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTB40N60FLWG
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 257 W; Maximum Collector Current (IC): 80 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel;
Datasheet NGTB40N60FLWG Datasheet
In Stock701
NAME DESCRIPTION
Maximum Collector Current (IC): 80 A
Maximum Power Dissipation (Abs): 257 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
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