Onsemi - NGTB40N65IHRTG

NGTB40N65IHRTG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTB40N65IHRTG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 405 W; Maximum Collector Current (IC): 80 A; Package Body Material: PLASTIC/EPOXY;
Datasheet NGTB40N65IHRTG Datasheet
In Stock2,497
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 80 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Surface Mount: NO
Terminal Finish: TIN
Nominal Turn Off Time (toff): 316 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 405 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 650 V
Additional Features: LOW CONDUCTION LOSS
Maximum VCEsat: 1.7 V
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Pricing (USD)

Qty. Unit Price Ext. Price
2,497 $1.370 $3,420.890

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