Onsemi - NGTG30N60FWG

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NGTG30N60FWG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTG30N60FWG
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 167 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
Datasheet NGTG30N60FWG Datasheet
In Stock1,246
NAME DESCRIPTION
Maximum Collector Current (IC): 60 A
Maximum Power Dissipation (Abs): 167 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
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Pricing (USD)

Qty. Unit Price Ext. Price
1,246 $3.700 $4,610.200

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