NTC080N120SC1 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTC080N120SC1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 178 W; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet	NTC080N120SC1 Datasheet
In Stock	2,279

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	31 A
Maximum Pulsed Drain Current (IDM):	132 A
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	178 W
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
JESD-30 Code:	R-XUUC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.11 ohm
Avalanche Energy Rating (EAS):	171 mJ
Maximum Feedback Capacitance (Crss):	6.5 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	1200 V
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,279	-	-

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