NTH4L060N065SC1 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTH4L060N065SC1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 269 W; Maximum Drain Current (ID): 50.3 A; No. of Terminals: 4;
Datasheet	NTH4L060N065SC1 Datasheet
In Stock	1,894

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	50.3 A
Maximum Pulsed Drain Current (IDM):	232 A
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	269 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Feedback Capacitance (Crss):	10.17 pF
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	650 V
Maximum Drain Current (Abs) (ID):	50.3 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,894	$1.692	$3,204.648

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