Onsemi - NTLJS17D0P03P8Z

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NTLJS17D0P03P8Z by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTLJS17D0P03P8Z
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; No. of Elements: 1; Minimum Operating Temperature: -55 Cel;
Datasheet NTLJS17D0P03P8Z Datasheet
In Stock645
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7 A
Surface Mount: YES
No. of Terminals: 4
Maximum Power Dissipation (Abs): 2.4 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N4
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0213 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): 260
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