Onsemi - NTLJS3D0N02P8ZTAG

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NTLJS3D0N02P8ZTAG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTLJS3D0N02P8ZTAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; No. of Elements: 1; Transistor Element Material: SILICON;
Datasheet NTLJS3D0N02P8ZTAG Datasheet
In Stock1,440
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12.1 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 2.4 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0055 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Additional Features: ULTRA LOW RESISTANCE
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,440 $0.365 $525.600

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