NTLUD3C20CZTBG by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTLUD3C20CZTBG
Description	N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;
Datasheet	NTLUD3C20CZTBG Datasheet
In Stock	2,405

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6.4 A
Maximum Pulsed Drain Current (IDM):	21 A
Surface Mount:	YES
No. of Terminals:	6
Maximum Power Dissipation (Abs):	1.4 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N6
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.023 ohm
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	12 V
Maximum Drain Current (Abs) (ID):	6.4 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,405	-	-

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