Onsemi - NTMFS4C10NT1G

  1. Home
  2. Onsemi - NTMFS4C10NT1G
NTMFS4C10NT1G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NTMFS4C10NT1G
Description Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Maximum Drain Current (Abs) (ID): 46 A; Terminal Finish: Matte Tin (Sn) - annealed; Moisture Sensitivity Level (MSL): 1;
Datasheet NTMFS4C10NT1G Datasheet
In Stock72,327
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Maximum Drain Current (Abs) (ID): 46 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
72,327 - -

Popular Products

Category Top Products

IRF640 by Vishay Siliconix

IRF640

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;
IRF640NPBF by Infineon Technologies

IRF640NPBF

Infineon Technologies

Infineon's IRF640NPBF is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 72A Max Pulsed Drain Current and 247mJ Avalanche Energy Rating. Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and can withstand temperatures from -55 to 175°C.
NTBG020N120SC1 by Onsemi

NTBG020N120SC1

Onsemi

NTBG020N120SC1 by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 98A, Avalanche Energy Rating of 264mJ, and Operating Temperature up to 175°C. This SINGLE configuration transistor has GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology in a RECTANGULAR package.
IRFP4668PBF by International Rectifier

IRFP4668PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; No. of Elements: 1; Maximum Drain Current (ID): 130 A;
IRF7103TRPBF by Infineon Technologies

IRF7103TRPBF

Infineon Technologies

IRF7103TRPBF by Infineon Technologies is a N-CHANNEL Power FET with 50V DS Breakdown Voltage and 3A Drain Current. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring a 0.13 ohm On Resistance. This small outline transistor has 2 elements with built-in diode, operating up to 150°C.
BSC067N06LS3GATMA1 by Infineon Technologies

BSC067N06LS3GATMA1

Infineon Technologies

BSC067N06LS3GATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 200A IDM, 47mJ EAS, and 0.0067 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and SILICON element material.
FDMC86139P by Onsemi

FDMC86139P

Onsemi

FDMC86139P by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage and 30A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.067 ohm RDS(on), and operates in ENHANCEMENT MODE.
IRFR9024PBF by Vishay Intertechnology

IRFR9024PBF

Vishay Intertechnology

Vishay Intertechnology's IRFR9024PBF is a P-CHANNEL FET with 60V DS Breakdown Voltage and 8.8A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.28 ohm On Resistance. Suitable for high-power circuits, it has a max power dissipation of 42W and can withstand temperatures from -55 to 150°C.
FDD7N25LZTM by Onsemi

FDD7N25LZTM

Onsemi

FDD7N25LZTM by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 6.2A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 56W.
SUD50P06-15-GE3 by Vishay Intertechnology

SUD50P06-15-GE3

Vishay Intertechnology

Vishay Intertechnology's SUD50P06-15-GE3 is a P-channel Power FET with 60V DS breakdown voltage and 80A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.015 ohm max RDS(on), and operates in enhancement mode.
FDS8984 by Onsemi

FDS8984

Onsemi

FDS8984 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 32mJ Avalanche Energy Rating. Ideal for SWITCHING applications, it features a SEPARATE configuration with 2 ELEMENTS and BUILT-IN DIODE. This small outline transistor has a max operating temperature of 150°C and can handle up to 30A pulsed drain current.
FDS8858CZ by Onsemi

FDS8858CZ

Onsemi

FDS8858CZ by Onsemi is a Power FET with N-Channel and P-Channel types, ideal for switching applications. It features a 30V DS breakdown voltage, 20A max pulsed drain current, and 0.017 ohm max drain-source resistance. With a small outline package style and operating temperature up to 150°C, it's suitable for various electronic designs.
IRFP460BPBF by Vishay Intertechnology

IRFP460BPBF

Vishay Intertechnology

Vishay Intertechnology's IRFP460BPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 62A IDM and 0.25 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with an EAS of 281mJ, making it suitable for high-power tasks.
IRF5305PBF by International Rectifier

IRF5305PBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Additional Features: AVALANCHE RATED, HIGH RELIABILITY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRFS3306TRLPBF by International Rectifier

IRFS3306TRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 230 W; Maximum Drain Current (Abs) (ID): 160 A; Package Style (Meter): SMALL OUTLINE;
BS170 by North American Philips Discrete Products Div

BS170

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
FDS4559-F085 by Onsemi

FDS4559-F085

Onsemi

FDS4559-F085 by Onsemi is a N-CHANNEL Power FET for switching applications. It features 60V DS breakdown voltage, 4.5A max drain current, and 0.055 ohm max on resistance. With a small outline package style and gull wing terminals, it operates in enhancement mode at up to 150°C peak temperature.
IRFR9024NTRPBF by Infineon Technologies

IRFR9024NTRPBF

Infineon Technologies

IRFR9024NTRPBF by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 44A and EAS of 62mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in a small outline design.
IRFR5505TRPBF by International Rectifier

IRFR5505TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; JEDEC-95 Code: TO-252AA; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF3205STRLPBF by Infineon Technologies

IRF3205STRLPBF

Infineon Technologies

Infineon's IRF3205STRLPBF is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 390A IDM, 264mJ EAS, and 0.008 ohm RDS(on). With ENHANCEMENT MODE operation and DRAIN connection, it offers high power dissipation of 200W in a SMALL OUTLINE package.