NTMFSC010N08M7 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTMFSC010N08M7
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 78.1 W; Case Connection: DRAIN; Avalanche Energy Rating (EAS): 640 mJ;
Datasheet	NTMFSC010N08M7 Datasheet
In Stock	224

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	61 A
Maximum Pulsed Drain Current (IDM):	180 A
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	78.1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.01 ohm
Avalanche Energy Rating (EAS):	640 mJ
Maximum Feedback Capacitance (Crss):	17 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	80 V
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
224	$0.604	$135.296

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