
Image shown is a representation only.
Manufacturer | Onsemi |
---|---|
Manufacturer's Part Number | NTTFD018N08LC |
Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 26 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; |
Datasheet | NTTFD018N08LC Datasheet |
In Stock | 527 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 26 A |
Maximum Pulsed Drain Current (IDM): | 349 A |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 8 |
Maximum Power Dissipation (Abs): | 26 W |
Terminal Position: | QUAD |
Package Style (Meter): | CHIP CARRIER |
JESD-30 Code: | S-PQCC-N8 |
No. of Elements: | 2 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | SOURCE |
Maximum Drain-Source On Resistance: | .018 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 32 mJ |
Maximum Feedback Capacitance (Crss): | 10 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 80 V |
Maximum Drain Current (Abs) (ID): | 26 A |
Peak Reflow Temperature (C): | 260 |