Onsemi - NTTFD4D1N03P1E

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NTTFD4D1N03P1E by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTTFD4D1N03P1E
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; JESD-609 Code: e3; JEDEC-95 Code: MO-220WEEC-1;
Datasheet NTTFD4D1N03P1E Datasheet
In Stock356
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 54 A
Maximum Pulsed Drain Current (IDM): 408 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 20 W
Terminal Position: QUAD
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-PQCC-N12
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .0054 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 74 mJ
Maximum Feedback Capacitance (Crss): 25 pF
JEDEC-95 Code: MO-220WEEC-1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
356 $0.583 $207.548

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