NTTFS115P10M5 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	NTTFS115P10M5
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Maximum Feedback Capacitance (Crss): 4.5 pF; JESD-30 Code: S-PDSO-N8;
Datasheet	NTTFS115P10M5 Datasheet
In Stock	1,387

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	13 A
Surface Mount:	YES
Terminal Finish:	Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
No. of Terminals:	8
Maximum Power Dissipation (Abs):	41 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.12 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	4.5 pF
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,387	$0.920	$1,276.040

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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