Onsemi - NTTFS4951NTWG

NTTFS4951NTWG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTTFS4951NTWG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25.5 W; JESD-609 Code: e3; Terminal Form: FLAT;
Datasheet NTTFS4951NTWG Datasheet
In Stock582
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8.3 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 8
Maximum Power Dissipation (Abs): 25.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .009 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Maximum Drain Current (Abs) (ID): 46 A
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