Image shown is a representation only.
| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NTTFS4C25NTAG |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20.2 W; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; |
| Datasheet | NTTFS4C25NTAG Datasheet |
| In Stock | 1,042,971 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
NTTFS4C25NTAGOSDKR NTTFS4C25NTAG-ND 2156-NTTFS4C25NTAG-OS NTTFS4C25NTAGOSTR NTTFS4C25NTAGOSCT ONSONSNTTFS4C25NTAG |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 27 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | 20.2 W |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 27 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









