Image shown is a representation only.
| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NVJD4401NT1G |
| Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .55 W; JESD-609 Code: e3; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | NVJD4401NT1G Datasheet |
| In Stock | 532 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
NVJD4401NT1GOSDKR NVJD4401NT1GOSTR NVJD4401NT1G-ND NVJD4401NT1GOSCT |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .91 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | .55 W |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | .91 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









