Onsemi - NVMTS0D5N04M8TXG

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NVMTS0D5N04M8TXG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVMTS0D5N04M8TXG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Maximum Power Dissipation (Abs): 300 W; Reference Standard: AEC-Q101; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .00058 ohm;
Datasheet NVMTS0D5N04M8TXG Datasheet
In Stock107
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 260 pF
Maximum Drain Current (ID): 522 A
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 40 V
Maximum Power Dissipation (Abs): 300 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 522 A
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .00058 ohm
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