Onsemi - NVMTS2D5N10MCTXG

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NVMTS2D5N10MCTXG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NVMTS2D5N10MCTXG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Maximum Power Dissipation (Abs): 115 W; JESD-609 Code: e3; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet NVMTS2D5N10MCTXG Datasheet
In Stock1,881
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 48 pF
Maximum Drain Current (ID): 152 A
Polarity or Channel Type: N-CHANNEL
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Maximum Power Dissipation (Abs): 115 W
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 152 A
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .0025 ohm
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