Onsemi - NXH020F120MNF1PTG

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NXH020F120MNF1PTG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NXH020F120MNF1PTG
Description N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 119 W; No. of Terminals: 22; Minimum Operating Temperature: -40 Cel;
Datasheet NXH020F120MNF1PTG Datasheet
In Stock1,836
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 51 A
Maximum Pulsed Drain Current (IDM): 153 A
Surface Mount: NO
No. of Terminals: 22
Maximum Power Dissipation (Abs): 119 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X22
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .03 ohm
Other Names: 5556-NXH020F120MNF1PTG
488-NXH020F120MNF1PTG
488-NXH020F120MNF1PTG-ND
Maximum Feedback Capacitance (Crss): 19 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 1200 V
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Pricing (USD)

Qty. Unit Price Ext. Price
1,836 $124.430 $228,453.480

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