Onsemi - NXH350N100H4Q2F2P1G

  1. Home
  2. Onsemi - NXH350N100H4Q2F2P1G
NXH350N100H4Q2F2P1G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NXH350N100H4Q2F2P1G
Description Insulated Gate Bipolar Transistors;
Datasheet NXH350N100H4Q2F2P1G Datasheet
In Stock1,495
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,495 $133.710 $199,896.450

Popular Products

Category Top Products

SGP10N60RUFDTU by Onsemi

SGP10N60RUFDTU

Onsemi

SGP10N60RUFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 16A IC, and 75W Pd. Ideal for MOTOR CONTROL applications due to its single configuration with built-in diode. Features fast switching times: ton of 49ns and tf of 220ns.
FS150R12KT4 by Infineon Technologies

FS150R12KT4

Infineon Technologies

Infineon FS150R12KT4 is a N-CHANNEL IGBT with 6 elements in BRIDGE configuration. It has a toff of 605ns and ton of 165ns, suitable for high-power applications. With a Vce(max) of 1200V and Tj(max) of 150°C, it's commonly used in power electronics for efficient switching operations.
CM400DY-24NF by Powerex

CM400DY-24NF

Powerex

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 400 A; Terminal Position: UPPER; Maximum Collector-Emitter Voltage: 1200 V;
IRG4PC40UDPBF by Infineon Technologies

IRG4PC40UDPBF

Infineon Technologies

IRG4PC40UDPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 40A. It has a nominal turn-off time of 330ns, making it ideal for power control applications requiring fast switching speeds. The package style is flange mount with a max power dissipation of 160W, suitable for high-power electronic systems.
IRG4RC10SDPBF by International Rectifier

IRG4RC10SDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Collector Current (IC): 14 A; Case Connection: COLLECTOR;
2MBI200VA-060-50 by Fujitsu

2MBI200VA-060-50

Fujitsu

Fujitsu's 2MBI200VA-060-50 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. Ideal for MOTOR CONTROL applications, it has a max. Collector-Emitter Voltage of 600V and max. Collector Current of 200A. Features include Nominal Turn Off Time of 600ns and Nominal Turn On Time of 650ns in a RECTANGULAR package style with FLANGE MOUNT.
STGP6NC60HD by STMicroelectronics

STGP6NC60HD

STMicroelectronics

STGP6NC60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 222ns. Package style is flange mount with through-hole terminals.
IXGH10N170A by IXYS Corporation

IXGH10N170A

IXYS Corporation

IXGH10N170A by IXYS Corp is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1700V and a max collector current of 10A. It is commonly used in motor control applications due to its fast nominal turn-off time of 240ns.
MMIX4G20N250 by Littelfuse

MMIX4G20N250

Littelfuse

MMIX4G20N250 by Littelfuse is an N-CHANNEL IGBT with 4 elements, VCEsat of 3.1V, and IC of 23A. Ideal for general purpose switching applications, it has a max VCE of 2500V and can handle up to 100W power dissipation. This surface-mount transistor operates at temperatures up to 150°C with fast turn-on (ton) and turn-off (toff) times.
IXXH75N60C3D1 by Littelfuse

IXXH75N60C3D1

Littelfuse

IXXH75N60C3D1 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 150A IC, and 750W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and a fast turn-off time of 185ns.
IXGT30N120B3D1 by Littelfuse

IXGT30N120B3D1

Littelfuse

IXGT30N120B3D1 by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 30A IC, and 300W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 150 °C.
CM200DY-12NF by Mitsubishi Electric

CM200DY-12NF

Mitsubishi Electric

CM200DY-12NF by Mitsubishi Electric is an N-CHANNEL IGBT with 2 elements and a built-in diode. It has a max VCEsat of 2.2V and can handle a max collector current (IC) of 200A. This IGBT is commonly used for power control applications.
NGTB25N120FL3WG by Onsemi

NGTB25N120FL3WG

Onsemi

NGTB25N120FL3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 50A IC, and 349W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. This FLANGE MOUNT device has a turn-off time of 282ns and turn-on time of 36ns.
APT50GP60J by Advanced Power Technology

APT50GP60J

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED; Nominal Turn Off Time (toff): 202 ns;
IKW40N120T2FKSA1 by Infineon Technologies

IKW40N120T2FKSA1

Infineon Technologies

IKW40N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 75A IC, and 600ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package ensures reliability in high-temp environments up to 175°C.
APT85GR120JD60 by Microsemi

APT85GR120JD60

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 116 A; Maximum Operating Temperature: 150 Cel;
SGL50N60RUFDTU by Fairchild Semiconductor

SGL50N60RUFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 80 A; Package Body Material: PLASTIC/EPOXY;
APT70GR120J by Microsemi

APT70GR120J

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 112 A; Transistor Application: MOTOR CONTROL;
GT40WR21,Q(O by Toshiba

GT40WR21,Q(O

Toshiba

Toshiba's GT40WR21,Q(O is an N-CHANNEL IGBT with 350 ns fall time, 375 W power dissipation, and 1800 V collector-emitter voltage. Ideal for high-power applications requiring up to 40 A collector current, it operates at a max temperature of 175°C.
IRG4PC50KPBF by International Rectifier

IRG4PC50KPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 52 A; Maximum Power Dissipation Ambient: 200 W;