Onsemi - NXH350N100H4Q2F2S1G

  1. Home
  2. Onsemi - NXH350N100H4Q2F2S1G
NXH350N100H4Q2F2S1G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NXH350N100H4Q2F2S1G
Description Insulated Gate Bipolar Transistors;
Datasheet NXH350N100H4Q2F2S1G Datasheet
In Stock1,425
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,425 $170.600 $243,105.000

Popular Products

Category Top Products

FD200R12KE3PHOSA1 by Infineon Technologies

FD200R12KE3PHOSA1

Infineon Technologies

Infineon's FD200R12KE3PHOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It has a single configuration with built-in diode, ideal for power control applications. Featuring 830ns turn off time and 400ns turn on time, this UL recognized transistor operates from -40°C and comes in a flange mount package style.
IFF600B12ME4PB11BPSA1 by Infineon Technologies

IFF600B12ME4PB11BPSA1

Infineon Technologies

Infineon Technologies IFF600B12ME4PB11BPSA1 is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max Vce of 1200V, toff of 750ns, and ton of 250ns. Ideal for power control applications due to UL recognition and isolated case connection.
FGA25N120ANTDTU by Rochester Electronics

FGA25N120ANTDTU

Rochester Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; Maximum Collector Current (IC): 50 A; Package Style (Meter): FLANGE MOUNT;
IXXX300N60B3 by Littelfuse

IXXX300N60B3

Littelfuse

The Littelfuse IXXX300N60B3 is an N-CHANNEL IGBT with 600V VCEsat, 550A IC, and 2300W power dissipation. Ideal for power control applications, it has a turn-off time of 430ns and operates b/w -55°C to 175°C.
SKIIP13NAB065V1 by Semikron International

SKIIP13NAB065V1

Semikron International

Semikron International's SKIIP13NAB065V1 is an N-CHANNEL IGBT for POWER CONTROL applications. With 600V VCEsat, 24A IC, and 205ns toff, it offers efficient performance. The FLANGE MOUNT package with 24 terminals and UL RECOGNIZED standard makes it ideal for high-power systems.
FF450R12KE4EHOSA1 by Infineon Technologies

FF450R12KE4EHOSA1

Infineon Technologies

FF450R12KE4EHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max collector-emitter voltage of 1200V, collector current of 520A, and turn-off time of 800ns. Ideal for power control applications, this transistor operates at temperatures as low as -40°C and is UL approved.
STGW60H65DFB by STMicroelectronics

STGW60H65DFB

STMicroelectronics

STGW60H65DFB by STMicroelectronics is an N-CHANNEL IGBT with 650V max collector-emitter voltage, 80A max collector current, and 375W max power dissipation. It operates up to 175°C making it suitable for high-power applications like motor drives and inverters.
6PS04512E43G37986NOSA1 by Infineon Technologies

6PS04512E43G37986NOSA1

Infineon Technologies

Infineon's 6PS04512E43G37986NOSA1 is an N-CHANNEL IGBT with 6 elements, max voltage of 1200V, and operating temp of 150°C. Ideal for power control applications due to its silicon material and isolated case connection in a rectangular package style.
IXYN100N120C3H1 by IXYS Corporation

IXYN100N120C3H1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 690 W; Maximum Collector Current (IC): 134 A; Terminal Position: UPPER;
SKM200GB176D by Semikron International

SKM200GB176D

Semikron International

SKM200GB176D by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. It features a Max VCEsat of 2.45V, Max Collector-Emitter Voltage of 1700V, and Max Collector Current of 260A. With a Nominal Turn Off Time of 900ns and Nominal Turn On Time of 405ns, it operates at temperatures up to 150°C.
SKIIP36NAB126V10 by Semikron International

SKIIP36NAB126V10

Semikron International

Semikron International's SKIIP36NAB126V10 is an N-CHANNEL IGBT with 1200V VCEsat, 88A IC, and 480ns toff. Ideal for POWER CONTROL applications, it operates b/w -40°C to 150°C. This RECTANGULAR package has 29 terminals and complies with IEC-60747-1; UL standards.
IXGN100N170 by IXYS Corporation

IXGN100N170

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 735 W; Maximum Collector Current (IC): 160 A; Transistor Element Material: SILICON;
IKW75N60TFKSA1 by Infineon Technologies

IKW75N60TFKSA1

Infineon Technologies

IKW75N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a nominal turn-off time of 401ns and nominal turn-on time of 69ns, suitable for high-power operations up to 150°C.
IRG4PH30KDPBF by Infineon Technologies

IRG4PH30KDPBF

Infineon Technologies

IRG4PH30KDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and Max Power Dissipation of 100W. It is designed for MOTOR CONTROL applications, featuring a single configuration with built-in diode and fast switching times (tr: 84ns, tf: 140ns).
IXXH30N60B3D1 by IXYS Corporation

IXXH30N60B3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
IXGH6N170 by IXYS Corporation

IXGH6N170

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 12 A; Maximum Gate-Emitter Voltage: 20 V;
HGTG11N120CND by Intersil

HGTG11N120CND

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 43 A; Maximum Fall Time (tf): 400 ns;
ISL9V3040D3ST by Onsemi

ISL9V3040D3ST

Onsemi

ISL9V3040D3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a max collector-emitter voltage of 450V and can handle a max collector current of 21A. This IGBT comes in a small outline package style and operates b/w -40 to 175 °C temperature range.
IRG4PH50SPBF by International Rectifier

IRG4PH50SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 57 A; Maximum Gate-Emitter Threshold Voltage: 6 V;
FP25R12W2T4PBPSA1 by Infineon Technologies

FP25R12W2T4PBPSA1

Infineon Technologies

FP25R12W2T4PBPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 39A. It is used for power control applications due to its complex configuration and nominal turn off time of 685ns. The transistor's package style is flange mount with a rectangular shape and isolated case connection.