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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NXH35C120L2C2SG |
| Description | N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Case Connection: ISOLATED; Nominal Turn On Time (ton): 240 ns; |
| Datasheet | NXH35C120L2C2SG Datasheet |
| In Stock | 1,687 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 35 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, 1 BRAKE IGBT, THREE PHASE DIODE BRIDGE AND THERMISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 6.8 V |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 485 ns |
| No. of Terminals: | 26 |
| Terminal Position: | DUAL |
| Nominal Turn On Time (ton): | 240 ns |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PDIP-T26 |
| No. of Elements: | 7 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -40 Cel |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 2.4 V |
