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Manufacturer | Onsemi |
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Manufacturer's Part Number | NXH450N65L4Q2F2PG |
Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 633 W; Maximum Collector Current (IC): 280 A; Package Style (Meter): FLANGE MOUNT; |
Datasheet | NXH450N65L4Q2F2PG Datasheet |
In Stock | 1,601 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Collector Current (IC): | 280 A |
Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 5.2 V |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
Minimum Operating Temperature: | -40 Cel |
Nominal Turn Off Time (toff): | 978 ns |
No. of Terminals: | 36 |
Maximum Power Dissipation (Abs): | 633 W |
Maximum Collector-Emitter Voltage: | 650 V |
Terminal Position: | UPPER |
Nominal Turn On Time (ton): | 192 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X36 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 125 Cel |
Maximum Gate-Emitter Voltage: | 20 V |
Case Connection: | ISOLATED |
Maximum VCEsat: | 2.2 V |