Onsemi - NXH80B120H2Q0SG

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NXH80B120H2Q0SG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NXH80B120H2Q0SG
Description N-CHANNEL; Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 103 W; Maximum Collector Current (IC): 41 A; Package Style (Meter): FLANGE MOUNT;
Datasheet NXH80B120H2Q0SG Datasheet
In Stock1,324
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 41 A
Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
No. of Terminals: 22
Maximum Power Dissipation (Abs): 103 W
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X22
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 125 Cel
Maximum Gate-Emitter Voltage: 20 V
Case Connection: ISOLATED
Maximum VCEsat: 2.5 V
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Pricing (USD)

Qty. Unit Price Ext. Price
1,324 $52.575 $69,609.300

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