Onsemi - NXH80T120L2Q0SG

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NXH80T120L2Q0SG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NXH80T120L2Q0SG
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 146 W; Maximum Collector Current (IC): 65 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
Datasheet NXH80T120L2Q0SG Datasheet
In Stock645
NAME DESCRIPTION
Maximum Collector Current (IC): 65 A
Maximum Power Dissipation (Abs): 146 W
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.8 V
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