Onsemi - NXH80T120L2Q0SG

NXH80T120L2Q0SG by Onsemi

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Manufacturer	Onsemi
Manufacturer's Part Number	NXH80T120L2Q0SG
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 146 W; Maximum Collector Current (IC): 65 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
Datasheet	NXH80T120L2Q0SG Datasheet
In Stock	645

NXH80T120L2Q0SG Technical Details

NAME	DESCRIPTION
Maximum Collector Current (IC):	65 A
Maximum Power Dissipation (Abs):	146 W
Maximum Collector-Emitter Voltage:	1200 V
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	2.8 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
645	-	-

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