SGS10N60RUFD by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	SGS10N60RUFD
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Maximum Collector Current (IC): 16 A; Package Body Material: PLASTIC/EPOXY;
Datasheet	SGS10N60RUFD Datasheet
In Stock	2,037

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	16 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	8.5 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	284 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	55 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	49 ns
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	410 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Fall Time (tf):	350 ns
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	600 V
Additional Features:	LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	2.8 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,037	-	-

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