Renesas Electronics - 2SC2757-F

  1. Home
  2. Renesas Electronics - 2SC2757-F
2SC2757-F by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SC2757-F
Description RF Small Signal Bipolar Transistors;
Datasheet 2SC2757-F Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BFU550AR by NXP Semiconductors

BFU550AR

NXP Semiconductors

The NXP Semiconductors BFU550AR is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It features a max operating temperature of 150°C, collector-emitter voltage of 16V, and transition frequency of 11GHz. This small outline package has Gull Wing terminals and can handle up to 0.08A collector current.
BFR360FH6327XTSA1 by Infineon Technologies

BFR360FH6327XTSA1

Infineon Technologies

BFR360FH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with a max fT of 14GHz. It is designed for amplifier applications in the S Band frequency range. This small outline package has a max operating temp of 150°C and collector-emitter voltage of 6V, making it suitable for high-frequency amplification needs.
BFY90 by Motorola

BFY90

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .05 A; JEDEC-95 Code: TO-72;
SD1127 by STMicroelectronics

SD1127

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;
CPH6074 by Onsemi

CPH6074

Onsemi

CPH6074 by Onsemi is a PNP BJT transistor with 2 elements, suitable for amplifier applications. It operates in the very high frequency band up to 1200 MHz, with a max collector-emitter voltage of 15V and power dissipation of 0.5W. The package is a small outline with Gull Wing terminals, making it ideal for surface mount applications.
2N3569 by Semitronics

2N3569

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BFQ256ATRL by NXP Semiconductors

BFQ256ATRL

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .3 A; JESD-609 Code: e3;
2SC4104 by Onsemi

2SC4104

Onsemi

The Onsemi 2SC4104 is an NPN RF BJT transistor with a max VCEsat of 0.5V and hFE of 60, ideal for switching applications. It has a max IC of 0.05A, fT of 700MHz, and operates up to 150 °C. This small outline transistor in plastic/epoxy package with gull wing terminals is suitable for surface mount designs.
934063143215 by NXP Semiconductors

934063143215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .018 A; Package Style (Meter): SMALL OUTLINE;
BFY90PBFREE by Central Semiconductor

BFY90PBFREE

Central Semiconductor

BFY90PBFREE by Central Semiconductor is an NPN BJT for AMPLIFIER applications. Features include Gp: 21 dB, fT: 1400 MHz, and hFE: 20. With a max operating temperature of 200°C, it has a package style of CYLINDRICAL and terminal finish of MATTE TIN OVER NICKEL.
934063109115 by NXP Semiconductors

934063109115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;
2SC5646A-TL-H by Onsemi

2SC5646A-TL-H

Onsemi

Onsemi's 2SC5646A-TL-H is an NPN RF BJT with max power dissipation of 0.1W, hFE of 100, and fT of 8000MHz. Ideal for applications requiring high-frequency signal amplification in a surface-mount configuration.
2N3570 by Texas Instruments

2N3570

Texas Instruments

2N3570 by Texas Instruments is a NPN BJT transistor with 4 terminals, 0.05A IC, and 1500MHz fT. Ideal for amplifier applications in the ultra high frequency band, it has a max operating temperature of 175°C and 0.2W power dissipation.
BFP843H6327XTSA1 by Infineon Technologies

BFP843H6327XTSA1

Infineon Technologies

BFP843H6327XTSA1 by Infineon is a NPN RF BJT transistor with 4 terminals, suitable for C band applications. It has a max power dissipation of 0.125W, hFE of 150, and operates up to 150°C. Ideal for amplifier circuits in high-frequency communication systems due to its small outline package and low collector-emitter voltage of 2.25V.
BFP193E6327HTSA1 by Infineon Technologies

BFP193E6327HTSA1

Infineon Technologies

BFP193E6327HTSA1 by Infineon is an NPN RF BJT with 4 terminals, operating up to 150°C. It has a transition frequency of 8000 MHz and can handle a collector-emitter voltage of 12V. Ideal for ultra-high frequency amplification applications due to its small outline package and high power dissipation capability.
BFS17 by Temic Semiconductors

BFS17

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2100 MHz; Maximum Collector Current (IC): .025 A; Package Body Material: PLASTIC/EPOXY;
MSC81002 by STMicroelectronics

MSC81002

STMicroelectronics

STMicroelectronics' MSC81002 is an NPN BJT transistor with 3 terminals, ideal for amplifier applications in L Band frequencies. With a max power dissipation of 6.3W and max collector current of 0.2A, it operates at up to 200 °C, featuring a ceramic-metal package body and silicon element material.
934064612115 by NXP Semiconductors

934064612115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
2SC2814-3 by Onsemi

2SC2814-3

Onsemi

Onsemi's 2SC2814-3 is an NPN RF BJT with a max fT of 320 MHz. It has a VCE of 20V and IC of 0.03A, ideal for amplifier applications in the VHF band. The transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly.
BFR93AW by New Jersey Semiconductor Products

BFR93AW

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .035 A; No. of Elements: 1; Transistor Element Material: SILICON;