Renesas Electronics - 2SC4536QR-AZ

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .025 A; Terminal Form: GULL WING;

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;

A5T3572 by Texas Instruments is an NPN BJT transistor with 3 terminals, 0.05 A max collector current, and 1000 MHz transition frequency. Ideal for amplifier applications in the ultra high-frequency band, it has a max power dissipation of 0.5 W and operates up to 150°C.

MCH4016-TL-H by Onsemi is a NPN RF BJT transistor with 4 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.35W, hFE of 60, and fT of 10GHz. This small outline package with flat terminals operates up to 150°C and supports a max collector-emitter voltage of 12V.

NSVF4020SG4T1G by Onsemi is an NPN BJT transistor for amplifier applications in KU band. With a max power dissipation of 0.4W, it offers a min hFE of 60 and fT of 16GHz. This small outline package has 4 terminals, operates b/w -55 to 150°C, and supports up to 8V collector-emitter voltage.

The Onsemi BF240RL1 is an NPN RF BJT transistor with a max collector-emitter voltage of 40V and fT of 600MHz. Ideal for amplifier applications, it has a max collector current of 0.025A and low capacitance at 0.34pF. The through-hole package style makes it suitable for various electronic designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;

NXP Semiconductors' BFR93A,215 is a NPN RF BJT transistor with max. freq. of 6000 MHz and hFE of 40, ideal for L Band applications like amplifiers. It has a max. power dissipation of 0.35 W, operates up to 175°C, and features a small outline package with gull wing terminals for surface mount assembly.

BF959G by Onsemi is a NPN RF BJT with 3 terminals. It operates in the VHF band, has hFE of 35, and can handle up to 1.5W power dissipation. Ideal for amplifier applications due to its high transition frequency of 700MHz and max collector current of 0.1A.

MSC2295-BT1G by Onsemi is a NPN BJT transistor for RF applications. With hFE of 70, it operates at 150 °C max temperature and has fT of 150 MHz. Ideal for amplifier circuits due to its small outline package and low collector current of 0.03 A.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Emitter Voltage: 12 V;

MPS918RLRA by Onsemi is an NPN RF BJT with 3 terminals, operating at a max temp of 150 °C. It has a fT of 600 MHz and Vce(max) of 15V, making it suitable for ultra-high frequency amplifier applications. Packaged in plastic/epoxy, it features a collector-base capacitance of 3pF and collector current up to 0.05A.

The Onsemi BF224RLRE is an NPN RF BJT with a max. collector-emitter voltage of 30V and max. collector current of 0.05A. Operating up to 150 °C, it has a transition frequency of 850MHz, making it ideal for high-frequency applications in very high frequency bands. The transistor's through-hole package with cylindrical shape and bottom terminal position ensures easy installation and reliable performance.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G16;

The Onsemi EC3H02BA is an NPN RF BJT with a single configuration, suitable for surface mount applications. It features a max power dissipation of 0.1W, min DC current gain of 120, and max operating temp of 150 °C. Ideal for high-frequency circuits up to 5000MHz requiring low collector current at 0.07A.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 100;

NXP Semiconductors' BFR92A,235 is an NPN RF BJT transistor with a max fT of 5000 MHz. It has a max power dissipation of 0.3W and operates up to 150°C. Ideal for amplifier applications in L Band due to its small outline package and high transition frequency.