Renesas Electronics - 2SC5337-T1-QS

  1. Home
  2. Renesas Electronics - 2SC5337-T1-QS
2SC5337-T1-QS by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SC5337-T1-QS
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .25 A; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;
Datasheet 2SC5337-T1-QS Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .25 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 15 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: LOW NOISE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FH102A-TR-E by Onsemi

FH102A-TR-E

Onsemi

FH102A-TR-E by Onsemi is an NPN RF BJT with 0.5W power dissipation, 90 min hFE, and 5000MHz fT. Ideal for high-frequency applications in electronics, it operates up to 150 °C with a collector current of 0.07A in surface-mount designs.
2N3866A by Advanced Power Technology

2N3866A

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .4 A; Package Style (Meter): CYLINDRICAL;
HFA3127BZ96 by Integrated Device Technology

HFA3127BZ96

Integrated Device Technology

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Time At Peak Reflow Temperature (s): 30;
MSC81402 by STMicroelectronics

MSC81402

STMicroelectronics

STMicroelectronics' MSC81402 is an NPN BJT transistor with a max power dissipation of 6W. Ideal for L Band applications, it has a min hFE of 30 and max IC of 0.23A. The package style is flange mount with a ceramic-metal sealed co-fired body material.
BLW32 by Asi Semiconductor

BLW32

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): 1 A; Transistor Application: AMPLIFIER;
BFR92ARGELB-GS08 by Vishay Semiconductors

BFR92ARGELB-GS08

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;
2N918 by Texas Instruments

2N918

Texas Instruments

2N918 by Texas Instruments is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and max power dissipation of 0.2W. Ideal for ultra high frequency band applications, such as amplifiers, it has a min DC current gain of 20 and operates up to 200°C.
BFT92 by NXP Semiconductors

BFT92

NXP Semiconductors

The NXP Semiconductors BFT92 is a PNP RF BJT transistor with 3 terminals, suitable for ultra-high frequency band applications. It has a max power dissipation of 0.3W, hFE of 20, and fT of 5000MHz. Ideal for amplifier circuits in small outline packages requiring high-frequency performance.
BFR340FH6327XTSA1 by Infineon Technologies

BFR340FH6327XTSA1

Infineon Technologies

The BFR340FH6327XTSA1 by Infineon Technologies is an NPN RF small signal bipolar junction transistor with a maximum collector-emitter voltage of 6V. It has a rectangular package shape and is suitable for amplifier applications in the S band. The transistor has a maximum collector current of 0.02A and a nominal transition frequency of 14,000MHz.
C-33 by ROHM

C-33

ROHM

ROHM C-33 is an NPN BJT transistor for amplifier applications. Features include VCEsat of 0.4V, Gp of 15dB, and hFE of 20. Operating at up to 150°C, it has a fT of 1000MHz and can handle IC up to 0.05A in the UHF band.
MPSH81ZL1 by Onsemi

MPSH81ZL1

Onsemi

MPSH81ZL1 by Onsemi is a PNP RF BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 20V, fT of 600MHz, and low 0.85pF C-B capacitance. Ideal for amplifier applications due to its silicon element material and through-hole terminal form.
BFS17 by NXP Semiconductors

BFS17

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1600 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;
MPSH17ZL1 by Onsemi

MPSH17ZL1

Onsemi

MPSH17ZL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is used in amplifier applications due to its very high frequency band capability. The package style is cylindrical with a plastic/epoxy body material and through-hole terminals.
2SC5227A-4-TB-E by Onsemi

2SC5227A-4-TB-E

Onsemi

Onsemi's 2SC5227A-4-TB-E is an NPN RF BJT with a max power dissipation of 0.2W and fT of 7000MHz. Ideal for small outline packages, it operates up to 150 °C, with IC at 0.07A making it suitable for high-frequency applications like RF amplifiers.
SS9018GBU by Fairchild Semiconductor

SS9018GBU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;
SS9018FBU by Fairchild Semiconductor

SS9018FBU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;
MPS3563RLRP by Onsemi

MPS3563RLRP

Onsemi

MPS3563RLRP by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates at up to 150 °C, has a Vceo of 12V, and IC of 0.05A. Ideal for ultra-high frequency amplifier applications due to its low collector-base capacitance and single configuration in a cylindrical package.
934067707235 by NXP Semiconductors

934067707235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .065 A;
MMBTH81LT1 by Motorola

MMBTH81LT1

Motorola

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; JESD-30 Code: R-PDSO-G3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BFR92PE6327XT by Infineon Technologies

BFR92PE6327XT

Infineon Technologies

BFR92PE6327XT by Infineon Technologies is an NPN RF BJT transistor with a max fT of 5000 MHz. It has a collector-emitter voltage of 15V and can handle a max collector current of 0.045A, making it suitable for switching applications in the L band frequency range. This surface-mount transistor comes in a small outline package with Gull Wing terminals.