2SC5812 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SC5812
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 15000 MHz; Maximum Power Dissipation (Abs): .08 W; Maximum Collector Current (IC): .05 A;
Datasheet	2SC5812 Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	15000 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	100
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.08 W
Maximum Collector-Emitter Voltage:	4 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Additional Features:	LOW NOISE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	.7 pF

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