Renesas Electronics - 2SD1164-ZK

  1. Home
  2. Renesas Electronics - 2SD1164-ZK
2SD1164-ZK by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number 2SD1164-ZK
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 60 V; Case Connection: COLLECTOR;
Datasheet 2SD1164-ZK Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 8000
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 60 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BCP56-16 by Zetex Plc

BCP56-16

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A;
BD139 by Central Semiconductor

BD139

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
NJVMJD127T4G by Onsemi

NJVMJD127T4G

Onsemi

NJVMJD127T4G by Onsemi is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has 100V VCEO, 8A IC, and 20W power dissipation. Ideal for amplifier applications due to its high hFE of 100 and operating temperature range from -65 to 150°C.
TIP42C by Semiconductors

TIP42C

Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP50 by SPC TECHNOLOGY/ MULTICOMP

TIP50

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP36C by Semitronics

TIP36C

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP122 by Rectron

TIP122

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3;
FZT857TA by Zetex Plc

FZT857TA

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): 3.5 A; Minimum DC Current Gain (hFE): 100;
2N3055H by Digitron Semiconductors

2N3055H

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP122 by Changzhou Galaxy Century Microelectronics

TIP122

Changzhou Galaxy Century Microelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 100 V; Terminal Position: SINGLE;
2N2905A by General Transistor

2N2905A

General Transistor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
TIP110 by Bourns

TIP110

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
TIP122TU by Onsemi

TIP122TU

Onsemi

TIP122TU by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 100V, max collector current of 5A, and min DC current gain of 1000. With a package style of flange mount and terminal form through-hole, it offers high power dissipation up to 65W in various electronic designs.
ULN2803AP by Toshiba

ULN2803AP

Toshiba

Toshiba's ULN2803AP is an 8-bank NPN Darlington transistor array with built-in diode and resistor, ideal for switching applications. Features include VCEsat of 1.6V, hFE min of 1000, and IC max of 0.5A. With a max operating temp of 85°C and VCE max of 50V, it offers reliable performance in various electronic circuits.
TIP125 by Asi Semiconductor

TIP125

Asi Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A;
TIP47 by Bourns

TIP47

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified;
TIP41C by Central Semiconductor

TIP41C

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP31C by Bourns

TIP31C

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A; Maximum Operating Temperature: 150 Cel;
TIP120 by Bourns

TIP120

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Terminal Position: SINGLE; Package Shape: RECTANGULAR;
SBCP56-10T1G by Onsemi

SBCP56-10T1G

Onsemi

SBCP56-10T1G by Onsemi is a NPN BJT transistor with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 1.5W and operating temp up to 150°C, it offers reliable performance in various electronic designs.