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Manufacturer | Renesas Electronics |
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Manufacturer's Part Number | 2SJ598-S15-AZ |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 23 W; Maximum Drain Current (ID): 12 A; Maximum Operating Temperature: 150 Cel; |
Datasheet | 2SJ598-S15-AZ Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 12 A |
Surface Mount: | NO |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 23 W |
Terminal Position: | SINGLE |
Package Style (Meter): | IN-LINE |
JESD-30 Code: | R-PSIP-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Power Dissipation Ambient: | 1 W |
Maximum Drain-Source On Resistance: | .19 ohm |
Maximum Feedback Capacitance (Crss): | 50 pF |
JEDEC-95 Code: | TO-251 |
Polarity or Channel Type: | P-CHANNEL |
Minimum DS Breakdown Voltage: | 60 V |
Peak Reflow Temperature (C): | NOT SPECIFIED |