2SK1215IGDUR by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SK1215IGDUR
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	2SK1215IGDUR Datasheet

NAME	DESCRIPTION
Minimum Power Gain (Gp):	24 dB
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.03 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	VERY HIGH FREQUENCY BAND

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