Renesas Electronics - 2SK1960-T2

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2SK1960-T2 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number 2SK1960-T2
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet 2SK1960-T2 Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3 A
Maximum Drain Current (Abs) (ID): 3 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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