2SK660-A by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	2SK660-A
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): .1 W; Qualification: Not Qualified; Transistor Element Material: SILICON;
Datasheet	2SK660-A Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	10
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	JUNCTION
Maximum Feedback Capacitance (Crss):	3 pF
Maximum Drain Current (ID):	.01 A
Sub-Category:	Other Transistors
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	TIN BISMUTH
JESD-609 Code:	e6
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.1 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	125 Cel
Peak Reflow Temperature (C):	260

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