Renesas Electronics - CT35SM-8

  1. Home
  2. Renesas Electronics - CT35SM-8
CT35SM-8 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number CT35SM-8
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Gate-Emitter Threshold Voltage: 7 V; Maximum Gate-Emitter Voltage: 30 V; Transistor Element Material: SILICON;
Datasheet CT35SM-8 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 7 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 400 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 30 V
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FS400R07A3E3BOMA1 by Infineon Technologies

FS400R07A3E3BOMA1

Infineon Technologies

FS400R07A3E3BOMA1 by Infineon is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 1.7V and can handle up to 500A of collector current. Ideal for power control applications, it offers fast turn-off time (430ns) and high power dissipation (1250W).
APT100GN60LDQ4G by Microchip Technology

APT100GN60LDQ4G

Microchip Technology

Microchip Technology's APT100GN60LDQ4G is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 229A max collector current. Ideal for power control applications, it features a built-in diode, 96ns turn-on time, and 435ns turn-off time. Suitable for high-power systems requiring up to 625W dissipation in a flange mount package.
IHW30N160R2FKSA1 by Infineon Technologies

IHW30N160R2FKSA1

Infineon Technologies

IHW30N160R2FKSA1 by Infineon is an N-CHANNEL IGBT with 1600V VCE, 60A IC, and 675ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 175°C, it has a FLANGE MOUNT style for COLLECTOR connection.
FS25R12YT3 by Infineon Technologies

FS25R12YT3

Infineon Technologies

Infineon FS25R12YT3 is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 40A, and Pmax of 165W. Ideal for high-power applications like motor drives due to its fast turn-off time (toff) of 640ns and turn-on time (ton) of 120ns in a RECTANGULAR package style.
IRGR2B60KDPBF by International Rectifier

IRGR2B60KDPBF

International Rectifier

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Maximum Collector-Emitter Voltage: 600 V;
IRGP4066D-EPBF by Infineon Technologies

IRGP4066D-EPBF

Infineon Technologies

IRGP4066D-EPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 140A max collector current. It has a power dissipation of 454W, making it ideal for power control applications. With a rise time of 90ns and fall time of 80ns, it offers efficient switching performance in a rectangular package style.
STGW20NC60VD by STMicroelectronics

STGW20NC60VD

STMicroelectronics

STGW20NC60VD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 200W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and a nominal turn-off time of 280ns.
IKD06N65ET6ARMA1 by Infineon Technologies

IKD06N65ET6ARMA1

Infineon Technologies

Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IKW15N120H3FKSA1 by Infineon Technologies

IKW15N120H3FKSA1

Infineon Technologies

IKW15N120H3FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 370ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package ensures durability in high-temp environments up to 175°C.
FS50R07W1E3B11ABOMA1 by Infineon Technologies

FS50R07W1E3B11ABOMA1

Infineon Technologies

Infineon's FS50R07W1E3B11ABOMA1 is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 250ns toff. Ideal for power control applications, this complex transistor has 6 elements in a rectangular package with flange mount style.
IXYP20N65C3D1M by Littelfuse

IXYP20N65C3D1M

Littelfuse

IXYP20N65C3D1M by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 18A IC, and 2.5V VCEsat. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C temperature range.
FGA25N120ANTDTU_NL by Fairchild Semiconductor

FGA25N120ANTDTU_NL

Fairchild Semiconductor

FGA25N120ANTDTU_NL by Fairchild Semiconductor is an N-CHANNEL IGBT with tr of 90 ns, tf of 180 ns, and Abs Pd of 312 W. It operates at a max Vce of 1200 V and can handle a max IC of 25 A. Ideal for high-power applications requiring fast switching speeds and high voltage capabilities.
IRG4PC50SPBF by International Rectifier

IRG4PC50SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Maximum Collector-Emitter Voltage: 600 V;
FGH50N6S2D by Onsemi

FGH50N6S2D

Onsemi

FGH50N6S2D by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 75A max collector current. It has a turn-off time of 180ns and turn-on time of 28ns, suitable for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at a max temperature of 150°C.
STGB30V60DF by STMicroelectronics

STGB30V60DF

STMicroelectronics

STMicroelectronics' STGB30V60DF is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 60A max collector current. Ideal for power control applications, it features a built-in diode, 225ns turn-off time, and operates up to 175°C.
ISL9V2040D3ST by Fairchild Semiconductor

ISL9V2040D3ST

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
BSM150GB120DLC by Eupec & Kg

BSM150GB120DLC

Eupec & Kg

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1200 W; Maximum Collector Current (IC): 300 A; Maximum Operating Temperature: 125 Cel;
FP25R12W2T4P_B11ENG by Infineon Technologies

FP25R12W2T4P_B11ENG

Infineon Technologies

Infineon's FP25R12W2T4P_B11ENG IGBT features 1200V VCEsat, 520ns toff, and 47ns ton. Ideal for high-power applications in industries like automotive, renewable energy, and industrial automation due to its N-Channel polarity and -40°C to 150°C operating temperature range.
IRGP35B60PDPBF by International Rectifier

IRGP35B60PDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 308 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V;
IRG4PC50FDPBF by International Rectifier

IRG4PC50FDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;