Renesas Electronics - HIP0061AS2

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HIP0061AS2 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number HIP0061AS2
Description N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: SILICON; JEDEC-95 Code: MO-169AC;
Datasheet HIP0061AS2 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON SOURCE, 3 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.5 A
Maximum Pulsed Drain Current (IDM): 10 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 7
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G7
No. of Elements: 3
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Drain-Source On Resistance: .265 ohm
Avalanche Energy Rating (EAS): 100 mJ
JEDEC-95 Code: MO-169AC
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: ESD PROTECTED
Maximum Drain Current (Abs) (ID): 3.5 A
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