Renesas Electronics - ISL70020SEHMX/SAMPLE

  1. Home
  2. Renesas Electronics - ISL70020SEHMX/SAMPLE
ISL70020SEHMX/SAMPLE by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number ISL70020SEHMX/SAMPLE
Description Power Field-Effect Transistors;
Datasheet ISL70020SEHMX/SAMPLE Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FDD4243-G by Onsemi

FDD4243-G

Onsemi

Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
STB6NK90ZT4 by STMicroelectronics

STB6NK90ZT4

STMicroelectronics

STB6NK90ZT4 by STMicroelectronics is a N-CHANNEL FET with 900V DS breakdown voltage, 23.2A IDM, and 300mJ EAS. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 140W at 150°C.
FQD16N25CTM by Onsemi

FQD16N25CTM

Onsemi

FQD16N25CTM by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 250V. It is an N-channel transistor with a max drain current of 16A and a max power dissipation of 160W. This transistor is commonly used for switching applications.
IPZ40N04S5L7R4ATMA1 by Infineon Technologies

IPZ40N04S5L7R4ATMA1

Infineon Technologies

Infineon's IPZ40N04S5L7R4ATMA1 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0107 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRFP460 by Fairchild Semiconductor

IRFP460

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Minimum DS Breakdown Voltage: 500 V; JEDEC-95 Code: TO-247;
PSMN5R5-60YS,115 by NXP Semiconductors

PSMN5R5-60YS,115

NXP Semiconductors

The NXP Semiconductors PSMN5R5-60YS,115 is a single N-channel power FET with 100A max drain current and 130W max power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as industrial motor control and power supplies.
IRFR7440TRPBF by International Rectifier

IRFR7440TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Minimum Operating Temperature: -55 Cel; Maximum Pulsed Drain Current (IDM): 760 A;
IRFH4251DTRPBF by International Rectifier

IRFH4251DTRPBF

International Rectifier

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Case Connection: SOURCE; Maximum Drain Current (Abs) (ID): 188 A;
JANTX2N6796 by Siliconix

JANTX2N6796

Siliconix

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e0;
IRFP4568PBF by Infineon Technologies

IRFP4568PBF

Infineon Technologies

Infineon's IRFP4568PBF is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 684A IDM and 0.0059 ohm RDS(on), it operates in ENHANCEMENT MODE up to 175°C. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in high-power circuits.
BS170 by Topaz Semiconductor

BS170

Topaz Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Maximum Operating Temperature: 150 Cel;
IRLML2030TRPBF by International Rectifier

IRLML2030TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
FDMS86252L by Fairchild Semiconductor

FDMS86252L

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Case Connection: DRAIN; No. of Elements: 1;
SI7439DP-T1-E3 by Vishay Intertechnology

SI7439DP-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI7439DP-T1-E3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 50A IDM, 80mJ EAS, and 0.09 ohm Drain-Source On Resistance. Operating at up to 150°C, it has a small outline package style for efficient heat dissipation.
2N7002W by Diodes Incorporated

2N7002W

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; JESD-609 Code: e0; No. of Elements: 1;
CSD18532Q5B by Texas Instruments

CSD18532Q5B

Texas Instruments

CSD18532Q5B by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 400A IDM, and 0.0043 ohm Drain-Source Resistance. Suitable for high-power switching circuits with operating temperatures from -55 to 150 °C.
IRF540SPBF by International Rectifier

IRF540SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Minimum DS Breakdown Voltage: 100 V; Package Style (Meter): SMALL OUTLINE;
IRLML2030TRPBF by Infineon Technologies

IRLML2030TRPBF

Infineon Technologies

IRLML2030TRPBF by Infineon is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 11A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.1 ohm Drain-Source On Resistance and 12pF Feedback Capacitance.
IRFH5004TRPBF by International Rectifier

IRFH5004TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;
IRF7341TRPBF by International Rectifier

IRF7341TRPBF

International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 4.7 A;