Renesas Electronics - IT2008

  1. Home
  2. Renesas Electronics - IT2008
IT2008 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number IT2008
Description WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Technology: GAAS; Gain: 8 dB; Maximum Operating Temperature: 150 Cel;
Datasheet IT2008 Datasheet
NAME DESCRIPTION
Construction: COMPONENT
Minimum Operating Frequency: 10 MHz
Maximum Supply Current: 900 mA
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 1.67
No. of Terminals: 6
Maximum Input Power (CW): 25 dBm
Package Equivalence Code: DIE OR CHIP
Technology: GAAS
Characteristic Impedance: 50 ohm
Additional Features: HIGH RELIABILITY
Maximum Operating Temperature: 150 Cel
Maximum Operating Frequency: 26500 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Gain: 8 dB
Power Supplies (V): 9
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

PHA-102+ by Mini-circuits

PHA-102+

Mini-circuits

WIDE BAND LOW POWER;
CMD311P34 by Qorvo

CMD311P34

Qorvo

WIDE BAND LOW POWER;
SGA3463Z by Qorvo

SGA3463Z

Qorvo

SGA3463Z by Qorvo is a wide band low power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.
MW7IC2040NR1 by Freescale Semiconductor

MW7IC2040NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 1805 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; Terminal Finish: Matte Tin (Sn);
RA20H8994M-101 by Mitsubishi Electric

RA20H8994M-101

Mitsubishi Electric

Mitsubishi Electric's RA20H8994M-101 is a plastic/epoxy RF amplifier module with 20 dBm CW input power, VSWR of 3, and operating frequency range of 896-941 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 110°C with hybrid technology and characteristic impedance of 50 ohms.
ZHL-1-2W+ by Mini-circuits

ZHL-1-2W+

Mini-circuits

ZHL-1-2W+ by Mini-circuits is a wide band medium power RF amplifier with a gain of 29 dB. It has a max input power of 10 dBm and can operate in temperatures ranging from -20 to 65 °C. This coaxial amplifier is suitable for applications requiring amplification in the frequency range of 5 MHz to 500 MHz.
QPA9421TR13 by Qorvo

QPA9421TR13

Qorvo

NARROW BAND HIGH POWER;
MGA-72543-TR1G by Agilent Technologies

MGA-72543-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Terminal Finish: Tin (Sn); Package Equivalence Code: SOT-343R;
CMD283C3 by Custom Mmic Design Services

CMD283C3

Custom Mmic Design Services

WIDE BAND LOW POWER; Maximum Operating Frequency: 6000 MHz; Maximum Input Power (CW): 20 dBm; Gain: 18 dB; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Construction: COMPONENT;
NBB-400-D by Rf Micro Devices

NBB-400-D

Rf Micro Devices

WIDE BAND LOW POWER; Minimum Operating Temperature: -45 Cel; Minimum Operating Frequency: 0 MHz; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.9;
HMC788ALP2E by Hittite Microwave

HMC788ALP2E

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 10000 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT;
HMC943APM5E by Analog Devices

HMC943APM5E

Analog Devices

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.
MGA-30789-BLKG by Broadcom

MGA-30789-BLKG

Broadcom

Broadcom's MGA-30789-BLKG is a wide band medium power RF amplifier with 8 dB gain. It operates from 2-6 GHz, handling up to 24 dBm CW input power. This surface mount component is ideal for RF and microwave applications requiring high performance in plastic/epoxy package.
HMC499LC4TR by Hittite Microwave

HMC499LC4TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;
HMC416LP4TR by Hittite Microwave

HMC416LP4TR

Hittite Microwave

NARROW BAND LOW POWER;
CMD283C3 by Qorvo

CMD283C3

Qorvo

Qorvo's CMD283C3 is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 2-6 GHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in compact designs.
MAX9931EUA+T by Maxim Integrated

MAX9931EUA+T

Maxim Integrated

MAX9931EUA+T by Maxim Integrated is a wide band low power RF amplifier with 50 ohm impedance. It operates from 2 MHz to 1600 MHz, handling up to 16 dBm CW input power. Ideal for RF and microwave applications, it has a temperature range of -40°C to 85°C.
HMC589AST89E by Analog Devices

HMC589AST89E

Analog Devices

Analog Devices' HMC589AST89E is a wide band low power RF amplifier with 13 dB gain and 8 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 0 to 4000 MHz. Ideal for RF & microwave applications requiring high performance in a compact form factor.
CMD264P3 by Custom Mmic Design Services

CMD264P3

Custom Mmic Design Services

WIDE BAND LOW POWER; Maximum Operating Frequency: 18000 MHz; JESD-609 Code: e3; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Gain: 18 dB;
MGA-72543-BLKG by Agilent Technologies

MGA-72543-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3; Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT;