Renesas Electronics - MBM100GS12A

AUIRGP4066D1-E by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 140A max collector current, and 454W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and fast switching times of 100ns rise and 80ns fall.

FS25R12KE3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 40A. This IGBT is commonly used in applications requiring high power switching capabilities at temperatures up to 150°C.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn Off Time (toff): 820 ns; Nominal Turn On Time (ton): 170 ns; Package Shape: RECTANGULAR;

IKW60N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a turn-off time of 314ns and turn-on time of 64ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode.

FGD3040G2-F085V by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.85V and a max collector current (IC) of 41A. It is commonly used for power control applications due to its high power dissipation of 150W and small outline package style.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 682 W; Maximum Collector Current (IC): 250 A; Terminal Position: UPPER;

IHW25N120E1XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and collector current of 50A. It has a turn off time of 1677ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations.

Fuji Electric's 7MBR50VB120-50 IGBT features N-CHANNEL polarity, 1200V VCEsat, and 50A IC. Ideal for power control applications with a max operating temperature of 175°C.

2PS13512E43W35222NOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, suitable for POWER CONTROL applications. It has a max operating temperature of 55°C and min of -25°C, housed in a RECTANGULAR MICROELECTRONIC ASSEMBLY package. The transistor's SILICON material and ISOLATED case connection enhance its performance.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Maximum Collector Current (IC): 170 A; Maximum Gate-Emitter Voltage: 20 V;

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 27 A; Nominal Turn Off Time (toff): 410 ns; Qualification: Not Qualified;

FS400R07A1E3 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max collector current (IC) of 500A. It is used for power control applications and has a package style of FLANGE MOUNT.

FF900R12IP4VBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 1300ns and a nominal turn-on time of 370ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and inverters.

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 900 A; Maximum Collector-Emitter Voltage: 1200 V; Transistor Element Material: SILICON;

ISL9V3040D3ST-F085C by Onsemi is an N-CHANNEL IGBT transistor with a VCEsat of 1.65V and IC of 21A, ideal for automotive ignition applications. It has a small outline package style, operates b/w -55 to 175 °C, and features a gate-emitter threshold voltage of 2.2V. The device offers fast rise/fall times (0.007/0.015 ns) making it suitable for high-speed switching requirements in automotive systems.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 105 A; Terminal Finish: MATTE TIN;

Infineon's FD16001200R17HP4B2BOSA2 IGBT features N-CHANNEL polarity, COMPLEX configuration, and 1700V max. collector-emitter voltage. Ideal for POWER CONTROL applications with 1710ns turn-off time and 650ns turn-on time. Package style is FLANGE MOUNT with 9 terminals in RECTANGULAR shape.

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 100 A; Terminal Finish: TIN SILVER COPPER;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; No. of Terminals: 3;

FS150R12KT3 by Infineon Technologies is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a VCEsat of 2.15V, IC of 200A, and Pmax of 700W. Ideal for high-power applications like motor drives and inverters due to its low on/off times and high collector-emitter voltage capability.