MBM200GR6 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	MBM200GR6
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 690 W; Maximum Collector Current (IC): 200 A; JESD-30 Code: R-XUFM-X7;
Datasheet	MBM200GR6 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	200 A
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Nominal Turn Off Time (toff):	550 ns
No. of Terminals:	7
Maximum Power Dissipation (Abs):	690 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	300 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X7
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	600 V
Additional Features:	HIGH RELIABILITY, LOW NOISE
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	2.6 V

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