Renesas Electronics - MBM50AS6

  1. Home
  2. Renesas Electronics - MBM50AS6
MBM50AS6 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number MBM50AS6
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Maximum Collector Current (IC): 50 A; Additional Features: HIGH SPEED, ULTRA SOFT FAST RECOVERY; Transistor Element Material: SILICON; No. of Elements: 2;
Datasheet MBM50AS6 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 400 ns
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
No. of Elements: 2
Additional Features: HIGH SPEED, ULTRA SOFT FAST RECOVERY
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SKM100GB125DN by Semikron International

SKM100GB125DN

Semikron International

SKM100GB125DN by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max VCEsat of 3.85V, IC of 100A, and toff of 380ns. Ideal for POWER CONTROL applications, it operates up to 1200V at 150°C with UL RECOGNIZED standards compliance.
APT200GN60JDQ4 by Microchip Technology

APT200GN60JDQ4

Microchip Technology

Microchip Technology's APT200GN60JDQ4 is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 283A max collector current. Ideal for power control applications, it features a single configuration with built-in diode, 660ns turn off time, and 130ns turn on time. Package style is flange mount with plastic/epoxy body material.
NVH680S75L4SPB by Onsemi

NVH680S75L4SPB

Onsemi

Insulated Gate Bipolar Transistors;
IXBK55N300 by Littelfuse

IXBK55N300

Littelfuse

IXBK55N300 by Littelfuse is an N-CHANNEL IGBT with 3.2V VCEsat, 130A IC, and 625W power dissipation. Ideal for POWER CONTROL applications, it features a 3000V VCE max and -55 to 150°C operating temp range in a RECTANGULAR package with THROUGH-HOLE terminals.
APT65GP60JDQ2 by Microsemi

APT65GP60JDQ2

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 431 W; Maximum Collector Current (IC): 130 A; No. of Elements: 1;
STGD20N45LZAG by STMicroelectronics

STGD20N45LZAG

STMicroelectronics

STGD20N45LZAG by STMicroelectronics is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It has a max VCEsat of 1.25V, collector-emitter voltage of 475V, and can handle a max current of 25A. Operating temperature ranges from -55 to 175°C.
AUIRG4BC30SSTRL by International Rectifier

AUIRG4BC30SSTRL

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 34 A; Moisture Sensitivity Level (MSL): 1;
FZ1000R33HL3BPSA1 by Infineon Technologies

FZ1000R33HL3BPSA1

Infineon Technologies

FZ1000R33HL3BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 3300V. It has a nominal turn off time of 4700ns and a nominal turn on time of 1050ns. This IGBT is commonly used in applications requiring high voltage switching capabilities.
IRG4IBC20KDPBF by International Rectifier

IRG4IBC20KDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34 W; Maximum Collector Current (IC): 11.5 A; Maximum Operating Temperature: 150 Cel;
STGW25M120DF3 by STMicroelectronics

STGW25M120DF3

STMicroelectronics

STGW25M120DF3 by STMicroelectronics is an N-CHANNEL IGBT with 375W power dissipation, 1200V collector-emitter voltage, and 50A collector current. It operates up to 175°C and has a gate-emitter threshold voltage of 7V. Ideal for high-power applications in industrial electronics.
FGH40N60UFDTU by Fairchild Semiconductor

FGH40N60UFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Nominal Turn On Time (ton): 110 ns;
MMIX4G20N250 by Littelfuse

MMIX4G20N250

Littelfuse

MMIX4G20N250 by Littelfuse is an N-CHANNEL IGBT with 4 elements, VCEsat of 3.1V, and IC of 23A. Ideal for general purpose switching applications, it has a max VCE of 2500V and can handle up to 100W power dissipation. This surface-mount transistor operates at temperatures up to 150°C with fast turn-on (ton) and turn-off (toff) times.
IXGH60N60C3D1 by IXYS Corporation

IXGH60N60C3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Maximum Collector Current (IC): 75 A; Package Body Material: PLASTIC/EPOXY;
IRG4BC30FDPBF by Infineon Technologies

IRG4BC30FDPBF

Infineon Technologies

IRG4BC30FDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 620ns and is designed for power control applications. With a max operating temperature of 150°C, it can handle up to 31A of collector current efficiently.
IRGR2B60KDPBF by Infineon Technologies

IRGR2B60KDPBF

Infineon Technologies

Infineon's IRGR2B60KDPBF is an N-CHANNEL IGBT with 600V VCE, 6.3A IC, and 35W power dissipation. Ideal for surface mount applications, it offers fast tr of 25ns and tf of 75ns. This device operates up to 150°C making it suitable for various power electronics systems.
IRGR2B60KDTRLPBF by International Rectifier

IRGR2B60KDTRLPBF

International Rectifier

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel;
F475R06W1E3BOMA1 by Infineon Technologies

F475R06W1E3BOMA1

Infineon Technologies

Infineon's F475R06W1E3BOMA1 IGBT features N-CHANNEL polarity, 600V max. collector-emitter voltage, and 100A max. collector current. Ideal for power control applications with a complex configuration, it offers fast turn-off time of 330ns and turn-on time of 45ns in a rectangular package with flange mount style.
IKW75N60H3FKSA1 by Infineon Technologies

IKW75N60H3FKSA1

Infineon Technologies

IKW75N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCE, 80A IC. It is a single configuration transistor with built-in diode for power control applications. The package style is flange mount with plastic/epoxy body material and through-hole terminals.
STGP5H60DF by STMicroelectronics

STGP5H60DF

STMicroelectronics

STGP5H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V, IC of 10A, and Ptot of 88W. Ideal for power control applications due to its fast turn-off time (toff) of 280ns and high collector-emitter voltage rating of 600V. The package style is flange mount with through-hole terminals.
IRGP50B60PD1PBF by International Rectifier

IRGP50B60PD1PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 161 ns;