Renesas Electronics - MBN200F12

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MBN200F12 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number MBN200F12
Description Insulated Gate Bipolar Transistors; Maximum Collector Current (IC): 200 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 1200 V; Maximum VCEsat: 3 V; No. of Elements: 1;
Datasheet MBN200F12 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 200 A
Maximum Collector-Emitter Voltage: 1200 V
No. of Elements: 1
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 3 V
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