Renesas Electronics - MBN400GR12

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MBN400GR12 by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number MBN400GR12
Description Insulated Gate Bipolar Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): 2000 W; Maximum Collector Current (IC): 400 A; JESD-30 Code: R-PUFM-X4; Qualification: Not Qualified;
Datasheet MBN400GR12 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 400 A
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
No. of Terminals: 4
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 2000 W
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.8 V
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