MBN400GS12AW by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	MBN400GS12AW
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 2000 W; Maximum Collector Current (IC): 400 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 3.4 V;
Datasheet	MBN400GS12AW Datasheet

NAME	DESCRIPTION
Maximum Collector Current (IC):	400 A
Maximum Power Dissipation (Abs):	2000 W
Maximum Collector-Emitter Voltage:	1200 V
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	3.4 V

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