MBN600C20 by Renesas Electronics | Transistors

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Manufacturer	Renesas Electronics
Manufacturer's Part Number	MBN600C20
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4000 W; Maximum Collector Current (IC): 600 A; Nominal Turn On Time (ton): 1600 ns;
Datasheet	MBN600C20 Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	600 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Nominal Turn Off Time (toff):	4000 ns
No. of Terminals:	4
Maximum Power Dissipation (Abs):	4000 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	1600 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	125 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	2000 V
Additional Features:	HIGH RELIABILITY, HIGH SPEED, LOW NOISE
Maximum Gate-Emitter Voltage:	20 V
Maximum VCEsat:	5.4 V

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