Renesas Electronics - N0601N-ZK-E2-AY

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N0601N-ZK-E2-AY by Renesas Electronics

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Manufacturer Renesas Electronics
Manufacturer's Part Number N0601N-ZK-E2-AY
Description Power Field-Effect Transistors;
Datasheet N0601N-ZK-E2-AY Datasheet
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IPA80R1K0CEXKSA2 by Infineon Technologies

IPA80R1K0CEXKSA2

Infineon Technologies

Infineon's IPA80R1K0CEXKSA2 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. Features include 18A IDM, 230mJ EAS, and 0.95 ohm RDS(on). Package style: FLANGE MOUNT, technology: MOSFET, element material: Si.
2N7002 by North American Philips Discrete Products Div

2N7002

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;
BSS123 by Philips Semiconductors

BSS123

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: MATTE TIN; Operating Mode: ENHANCEMENT MODE;
IPZ40N04S5L7R4ATMA1 by Infineon Technologies

IPZ40N04S5L7R4ATMA1

Infineon Technologies

Infineon's IPZ40N04S5L7R4ATMA1 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0107 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
FDS3672 by Onsemi

FDS3672

Onsemi

FDS3672 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 7.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, this transistor has an EAS of 416mJ and 0.023 ohm RDS(on).
FDS4465 by Fairchild Semiconductor

FDS4465

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE;
SI4946BEY-T1-E3 by Vishay Intertechnology

SI4946BEY-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI4946BEY-T1-E3 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 30A IDM, and 0.041 ohm RDS(ON). Ideal for applications requiring high power dissipation in small outline packages.
IRF740PBF by Vishay Intertechnology

IRF740PBF

Vishay Intertechnology

Vishay Intertechnology's IRF740PBF is a N-CHANNEL Power FET with 400V DS Breakdown Voltage and 40A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 520mJ EAS rating, and 0.55 ohm RDS(on).
STH13N120K5-2AG by STMicroelectronics

STH13N120K5-2AG

STMicroelectronics

Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NX3008NBK,215 by NXP Semiconductors

NX3008NBK,215

NXP Semiconductors

NX3008NBK,215 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.4A and power dissipation of 0.42W. Ideal for applications requiring high efficiency in power management systems due to its single configuration and enhancement mode operation at up to 150°C operating temperature.
ZXMP10A18KTC by Zetex Plc

ZXMP10A18KTC

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .15 ohm;
NDT3055L_NL by Fairchild Semiconductor

NDT3055L_NL

Fairchild Semiconductor

Fairchild Semiconductor's NDT3055L_NL is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 25A IDM, and 0.1 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 150°C, making it ideal for high-power switching circuits.
2N7000 by Topaz Semiconductor

2N7000

Topaz Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: Tin/Lead (Sn/Pb);
IRF640 by Vishay Intertechnology

IRF640

Vishay Intertechnology

Vishay Intertechnology's IRF640 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 125W and operates in ENHANCEMENT MODE. Suitable for various electronic devices requiring high current switching capabilities.
IRF7404TRPBF by Infineon Technologies

IRF7404TRPBF

Infineon Technologies

IRF7404TRPBF by Infineon is a P-CHANNEL FET with 20V DS Breakdown Voltage and 27A IDM. Ideal for power applications, it features a single configuration with built-in diode, small outline package style, and -55 to 150 °C operating temperature range.
IRLML6246TRPBF by International Rectifier

IRLML6246TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Finish: MATTE TIN; No. of Elements: 1;
FQD17P06TM by Onsemi

FQD17P06TM

Onsemi

FQD17P06TM by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 48A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it offers 0.135 ohm Drain-Source On Resistance and can handle up to 44W power dissipation at 150°C.
2N7002PV,115 by NXP Semiconductors

2N7002PV,115

NXP Semiconductors

2N7002PV,115 by NXP Semiconductors is an N-CHANNEL Power FET with 0.35A Max Drain Current and 0.5W Max Power Dissipation. It operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 150 °C. Ideal for applications requiring high power efficiency in compact designs.
MSC035SMA170B by Microsemi

MSC035SMA170B

Microsemi

Power Field-Effect Transistors;
IRFR4104TRPBF by International Rectifier

IRFR4104TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; JESD-30 Code: R-PSSO-G2; Maximum Drain-Source On Resistance: .0055 ohm;