Renesas Electronics - NE004100-6

  1. Home
  2. Renesas Electronics - NE004100-6
NE004100-6 by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NE004100-6
Description RF Power Field-Effect Transistors;
Datasheet NE004100-6 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

ART700FHU by Ampleon Netherlands B V

ART700FHU

Ampleon Netherlands B V

ART700FHU by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with 177V DS Breakdown Voltage, 26.8 dB Power Gain, and operates in the Ultra High Frequency Band. It is a COMMON SOURCE amplifier transistor with METAL-OXIDE SEMICONDUCTOR technology, suitable for high-performance applications requiring a FLANGE MOUNT package style.
AFT09S200W02SR3 by NXP Semiconductors

AFT09S200W02SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
934056375112 by NXP Semiconductors

934056375112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 2.2 A; No. of Terminals: 2;
PD55008 by STMicroelectronics

PD55008

STMicroelectronics

STMicroelectronics PD55008 is an N-CHANNEL RF Power FET with 40V DS breakdown voltage, ideal for amplifier applications in the UHF band. It features a single configuration, GULL WING terminals, and operates in enhancement mode. With 4A max drain current and 52.8W power dissipation, it offers high performance in a small outline package.
TIM0910-15L by Toshiba

TIM0910-15L

Toshiba

The Toshiba TIM0910-15L is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in X band. Featuring a ceramic-metal sealed co-fired package, it operates in depletion mode with 11.5A max drain current and 60W power dissipation at 175°C ambient temperature.
934064995112 by NXP Semiconductors

934064995112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Highest Frequency Band: S BAND; Minimum DS Breakdown Voltage: 65 V;
MRF8S21200HSR6 by NXP Semiconductors

MRF8S21200HSR6

NXP Semiconductors

NXP Semiconductors' MRF8S21200HSR6 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in S BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. The transistor has a max operating temperature of 225°C and comes in a FLATPACK package style.
A2I25D012NR1 by NXP Semiconductors

A2I25D012NR1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
STAC2932F by STMicroelectronics

STAC2932F

STMicroelectronics

STAC2932F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 40 A, breakdown voltage of 125 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 625 W.
BLF6G15L-40RN by NXP Semiconductors

BLF6G15L-40RN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
CGH40006P by Wolfspeed

CGH40006P

Wolfspeed

CGH40006P by Wolfspeed is an N-CHANNEL RF Power FET with a CERAMIC, METAL-SEALED COFIRED package. It operates in ENHANCEMENT MODE for AMPLIFIER applications in the C BAND frequency range. Featuring GALLIUM NITRIDE technology, it has a 120V DS Breakdown Voltage and can handle up to 0.75A Drain Current.
STAC1214-350 by STMicroelectronics

STAC1214-350

STMicroelectronics

RF Power Field-Effect Transistors;
CLF1G0035-50 by Ampleon Netherlands B V

CLF1G0035-50

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Case Connection: SOURCE;
SD2951-10 by STMicroelectronics

SD2951-10

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
CGHV1F025S by Wolfspeed

CGHV1F025S

Wolfspeed

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SD2922 by STMicroelectronics

SD2922

STMicroelectronics

SD2922 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a min DS breakdown voltage of 125V and a max drain current of 40A, making it ideal for high-performance RF amplifiers. Its compact flange mount design ensures efficient surface mounting in various electronic devices.
LET9150 by STMicroelectronics

LET9150

STMicroelectronics

LET9150 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 20 A, breakdown voltage of 80 V, and operates in the L band. Ideal for high-power amplification with a compact surface mount design.
PD55003TR-E by STMicroelectronics

PD55003TR-E

STMicroelectronics

STMicroelectronics PD55003TR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2.5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features ENHANCEMENT MODE operation, 31.7W Power Dissipation, and operates up to 165°C temperature.
MRF151G by Motorola

MRF151G

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; JESD-30 Code: R-CDFM-F4;
CGH40006S by Wolfspeed

CGH40006S

Wolfspeed

CGH40006S by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for C BAND applications. Featuring Gallium Nitride technology, it operates in Enhancement Mode with a SINGLE configuration and SMALL OUTLINE package style for surface mount assembly.